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AOD3N80

AOD3N80 Alpha & Omega Semiconductor Inc.

AOD3N80.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 2.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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Technische Details AOD3N80 Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CH 800V 2.8A TO252, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Vgs (Max): ±30V.

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AOD3N80 AOS AOD3N80.pdf MOSFET N-CH 800V 2.8A TO252 Транзистори
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Im Einkaufswagen  Stück im Wert von  UAH
AOD3N80 AOD3N80 Alpha & Omega Semiconductor Inc. AOD3N80.pdf Description: MOSFET N-CH 800V 2.8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N80 AOD3N80.pdf
Hersteller: AOS
MOSFET N-CH 800V 2.8A TO252 Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOD3N80 AOD3N80.pdf
AOD3N80
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 800V 2.8A TO252
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH