AOD4126 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
auf Bestellung 941 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
85+ | 0.85 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AOD4126 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 100V 7.5A/43A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, Power Dissipation (Max): 3W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V.
Weitere Produktangebote AOD4126 nach Preis ab 0.63 EUR bis 1.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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AOD4126 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 50W Case: TO252 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 941 Stücke: Lieferzeit 7-14 Tag (e) |
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AOD4126 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 7.5A/43A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
auf Bestellung 487 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD4126 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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AOD4126 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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AOD4126 | Hersteller : Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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AOD4126 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 7.5A/43A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V |
Produkt ist nicht verfügbar |