AOD4189 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 40V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.33 EUR |
| 5000+ | 0.31 EUR |
| 7500+ | 0.29 EUR |
| 12500+ | 0.28 EUR |
| 17500+ | 0.27 EUR |
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Technische Details AOD4189 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 40V 40A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V, Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V.
Weitere Produktangebote AOD4189 nach Preis ab 0.38 EUR bis 1.36 EUR
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AOD4189 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 40V 40A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 20 V |
auf Bestellung 24020 Stücke: Lieferzeit 10-14 Tag (e) |
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AOD4189 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 40A 3-Pin(2+Tab) DPAK |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOD4189 | Hersteller : ALPHA&OMEGA |
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auf Bestellung 4061 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOD4189 | Hersteller : UMW |
Transistor P-Channel MOSFET; 40V; 20V; 29mOhm; 40A; 62,5W; -55°C ~ 175°C; Equivalent: AOD4189 Alpha&Omega Semiconductor AOS; AOD4189 UMW TAOD4189 UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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AOD4189 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 40A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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AOD4189 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 40V 40A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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AOD4189 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -28A; 31W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -28A Power dissipation: 31W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 31.4nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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AOD4189 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -28A; 31W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -28A Power dissipation: 31W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 31.4nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |