AOD4286 ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 100V; 20V; 126mOhm; 14A; 30W; -55°C ~ 175°C; AOD4286 TAOD4286
Anzahl je Verpackung: 25 Stücke
auf Bestellung 57 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.11 EUR |
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Technische Details AOD4286 ALPHA&OMEGA
Description: MOSFET N CH 100V 4A TO252, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOD4286 nach Preis ab 0.29 EUR bis 1.19 EUR
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AOD4286 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TO252 Polarisation: unipolar Gate charge: 2.8nC On-state resistance: 68mΩ Power dissipation: 30W Drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 100V |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOD4286 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
Polarisation: unipolar
Gate charge: 2.8nC
On-state resistance: 68mΩ
Power dissipation: 30W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
Polarisation: unipolar
Gate charge: 2.8nC
On-state resistance: 68mΩ
Power dissipation: 30W
Drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 1.19 EUR |
| 145+ | 0.58 EUR |
| 241+ | 0.36 EUR |
| 268+ | 0.32 EUR |
| 500+ | 0.29 EUR |