Technische Details AOD446 AO
Description: MOSFET N-CH 75V 10A TO252, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), 20W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote AOD446
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
AOD446 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 75V 10A TO252Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.1W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AOD446 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 75V 10A TO252
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 75V 10A TO252
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 20W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH