AOD558 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.95 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.43 EUR |
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Technische Details AOD558 Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
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AOD558 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: 30V N-CHANNEL MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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