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AOD5B65MQ1E

AOD5B65MQ1E ALPHA & OMEGA SEMICONDUCTOR

AOD5B65MQ1E.pdf
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 5A; 21W; TO252
Case: TO252
Type of transistor: IGBT
Kind of package: reel; tape
Mounting: SMD
Gate charge: 8.8nC
Power dissipation: 21W
Collector current: 5A
Pulsed collector current: 15A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
auf Bestellung 2478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.9 EUR
136+0.53 EUR
180+0.4 EUR
195+0.37 EUR
500+0.32 EUR
1000+0.3 EUR
Mindestbestellmenge: 80
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Technische Details AOD5B65MQ1E ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 5A 650V TO252, Power - Max: 52 W, Current - Collector Pulsed (Icm): 15 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 10 A, Gate Charge: 8.8 nC, Test Condition: 400V, 5A, 60Ohm, 15V, Switching Energy: 90µJ (on), 60µJ (off), Td (on/off) @ 25°C: 7ns/78ns, Supplier Device Package: TO-252 (DPAK), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A, Reverse Recovery Time (trr): 74 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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AOD5B65MQ1E Hersteller : Alpha & Omega Semiconductor Inc. AOD5B65MQ1E.pdf Description: IGBT 5A 650V TO252
Power - Max: 52 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Gate Charge: 8.8 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 90µJ (on), 60µJ (off)
Td (on/off) @ 25°C: 7ns/78ns
Supplier Device Package: TO-252 (DPAK)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Reverse Recovery Time (trr): 74 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH