AOD606 A&O
Produktcode: 29164
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Lieblingsprodukt
Hersteller: A&O
Gehäuse: D-Pak-5 (TO-252-5)
Drain-Source-Spannung Uds, V: 40 V
Drain-Strom Idd, A: 8 А
Durchlasswiderstand Rds(on), Ohm: 0,033 Ohm
Montage: SMD
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Weitere Produktangebote AOD606
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOD606 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOD606 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 40V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W, 1.7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH