AOD607A ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 30/-30V
Drain current: 8/-9.4A
Power dissipation: 7.5/12W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 25/27mΩ
Mounting: SMD
Gate charge: 6.7nC
Kind of channel: enhancement
Semiconductor structure: common drain
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 193+ | 0.44 EUR |
| 218+ | 0.39 EUR |
| 250+ | 0.35 EUR |
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Technische Details AOD607A ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N/P-CH 30V 8A TO252-4L, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 19W (Tc), 30W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V, Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA, Supplier Device Package: TO-252-4L.
Weitere Produktangebote AOD607A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOD607A | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19W (Tc), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOD607A |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Description: MOSFET N/P-CH 30V 8A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 19W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA
Supplier Device Package: TO-252-4L
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH