AOD609G Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
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Technische Details AOD609G Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPAK (4 Leads + Tab), Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V, Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-4L, Part Status: Active.
Weitere Produktangebote AOD609G
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AOD609G | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AOD609G | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 12/-12A Power dissipation: 14/15W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 30/45mΩ Mounting: SMD Gate charge: 10/15.5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOD609G |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Description: MOSFET N/P-CH 40V 12A TO252-4L
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPAK (4 Leads + Tab)
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-4L
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AOD609G |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 12/-12A
Power dissipation: 14/15W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 30/45mΩ
Mounting: SMD
Gate charge: 10/15.5nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 12/-12A
Power dissipation: 14/15W
Case: TO252-4
Gate-source voltage: ±20V
On-state resistance: 30/45mΩ
Mounting: SMD
Gate charge: 10/15.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH