Technische Details AOD7B65M3 Alpha & Omega Semiconductor Inc.
Category: SMD IGBT transistors, Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ, Type of transistor: IGBT, Collector-emitter voltage: 650V, Collector current: 7A, Power dissipation: 28W, Case: TO252, Gate-emitter voltage: ±30V, Pulsed collector current: 21A, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Collector-emitter saturation voltage: 1.87V, Turn-off switching energy: 0.099mJ, Turn-on switching energy: 0.108mJ, Turn-on time: 21ns, Turn-off time: 136ns.
Weitere Produktangebote AOD7B65M3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOD7B65M3 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 7A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 21A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Collector-emitter saturation voltage: 1.87V Turn-off switching energy: 0.099mJ Turn-on switching energy: 0.108mJ Turn-on time: 21ns Turn-off time: 136ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOD7B65M3 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 28W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 1.87V
Turn-off switching energy: 0.099mJ
Turn-on switching energy: 0.108mJ
Turn-on time: 21ns
Turn-off time: 136ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 28W
Case: TO252
Gate-emitter voltage: ±30V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Collector-emitter saturation voltage: 1.87V
Turn-off switching energy: 0.099mJ
Turn-on switching energy: 0.108mJ
Turn-on time: 21ns
Turn-off time: 136ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH