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AOD9N50

AOD9N50 ALPHA & OMEGA SEMICONDUCTOR

AOD9N50.pdf Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.7A; 178W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.7A
Power dissipation: 178W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 13.1nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
105+0.68 EUR
Mindestbestellmenge: 105
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Technische Details AOD9N50 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 500V 9A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V.

Weitere Produktangebote AOD9N50 nach Preis ab 0.68 EUR bis 1.78 EUR

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AOD9N50 AOD9N50 Hersteller : ALPHA & OMEGA SEMICONDUCTOR AOD9N50.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.7A; 178W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.7A
Power dissipation: 178W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: SMD
Gate charge: 13.1nC
Kind of channel: enhanced
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
105+0.68 EUR
Mindestbestellmenge: 105
AOD9N50 AOD9N50 Hersteller : Alpha & Omega Semiconductor Inc. AOD9N50.pdf Description: MOSFET N-CH 500V 9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.74 EUR
Mindestbestellmenge: 2500
AOD9N50 AOD9N50 Hersteller : Alpha & Omega Semiconductor Inc. AOD9N50.pdf Description: MOSFET N-CH 500V 9A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 4.5A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
auf Bestellung 7259 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
13+ 1.46 EUR
100+ 1.13 EUR
500+ 0.96 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 10
AOD9N50 AOD9N50 Hersteller : Alpha & Omega Semiconductor aod9n50.pdf Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 32500 Stücke:
Lieferzeit 14-21 Tag (e)