AOE6930 Alpha & Omega Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.33 EUR |
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Technische Details AOE6930 Alpha & Omega Semiconductor
Description: MOSFET 2N-CH 30V 22A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 24W, 75W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V, Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AOE6930 nach Preis ab 1.34 EUR bis 4.96 EUR
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AOE6930 | Hersteller : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 30V 22A/85A 8-Pin DFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOE6930 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6 Case: DFN5x6 Mounting: SMD On-state resistance: 4.3/0.83mΩ Type of transistor: N-MOSFET x2 Semiconductor structure: asymmetric Drain current: 22/85A Power dissipation: 9.6/30W Polarisation: unipolar Gate charge: 15nC Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±12V; ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 928 Stücke: Lieferzeit 7-14 Tag (e) |
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AOE6930 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 22/85A; 9.6/30W; DFN5x6 Case: DFN5x6 Mounting: SMD On-state resistance: 4.3/0.83mΩ Type of transistor: N-MOSFET x2 Semiconductor structure: asymmetric Drain current: 22/85A Power dissipation: 9.6/30W Polarisation: unipolar Gate charge: 15nC Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±12V; ±20V |
auf Bestellung 928 Stücke: Lieferzeit 14-21 Tag (e) |
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AOE6930 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 75W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
auf Bestellung 2014 Stücke: Lieferzeit 10-14 Tag (e) |
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AOE6930 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 22A/85A T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AOE6930 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 22A/85A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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AOE6930 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 22A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 75W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 15V, 5560pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 65nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |