AOE6932 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 55A/85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 24W, 52W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2922 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.23 EUR |
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Technische Details AOE6932 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 55A/85A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 24W, 52W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AOE6932 nach Preis ab 1.13 EUR bis 1.5 EUR
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| AOE6932 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
AOE6932 Multi channel transistors |
auf Bestellung 2226 Stücke: Lieferzeit 7-14 Tag (e) |
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AOE6932 Produktcode: 182233
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AOE6932 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 52W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |