AOE6932 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 55/85A; 9.6/20W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55/85A
Power dissipation: 9.6/20W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5/1.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
auf Bestellung 2707 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.59 EUR |
| 50+ | 1.44 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
| 62+ | 1.16 EUR |
| 100+ | 1.14 EUR |
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Technische Details AOE6932 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 55A/85A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 24W, 52W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AOE6932 nach Preis ab 1.12 EUR bis 2.6 EUR
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AOE6932 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 55/85A; 9.6/20W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 55/85A Power dissipation: 9.6/20W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5/1.4mΩ Mounting: SMD Gate charge: 30nC Kind of channel: enhanced Semiconductor structure: asymmetric Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2707 Stücke: Lieferzeit 7-14 Tag (e) |
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AOE6932 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 52W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
auf Bestellung 2922 Stücke: Lieferzeit 10-14 Tag (e) |
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AOE6932 Produktcode: 182233 |
Transistoren > MOSFET N-CH |
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AOE6932 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 55A/85A 8-Pin DFN EP T/R |
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AOE6932 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 55A/85A 8-Pin DFN EP T/R |
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AOE6932 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 55A/85A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 24W, 52W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Tc), 85A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V, 4180pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, 50nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |