AOI2610E Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 60V 46A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Supplier Device Package: TO-251A
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Technische Details AOI2610E Alpha & Omega Semiconductor Inc.
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 36.5A, Power dissipation: 23.5W, Case: TO251A, Gate-source voltage: ±20V, On-state resistance: 9.5mΩ, Mounting: THT, Gate charge: 7nC, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote AOI2610E
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOI2610E | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36.5A Power dissipation: 23.5W Case: TO251A Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 7nC Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOI2610E |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36.5A; 23.5W; TO251A; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36.5A
Power dissipation: 23.5W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH