AOI409 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 26A TO251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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Technische Details AOI409 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 26A TO251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V.