AOI409 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 26A TO251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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Technische Details AOI409 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 60V 26A TO251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 60W (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V.
Weitere Produktangebote AOI409
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOI409 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -18A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: THT Gate charge: 22.2nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOI409 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.2nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 30W; TO251A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 22.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH