AOI4126 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 7.5A/43A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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Technische Details AOI4126 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 7.5A/43A TO251A, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Weitere Produktangebote AOI4126
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOI4126 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 50W Case: TO251A Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Gate charge: 28nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOI4126 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 50W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 28nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 50W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 50W
Case: TO251A
Gate-source voltage: ±25V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 28nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH