AOI4286 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-251A
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 70+ | 0.79 EUR |
| 140+ | 0.57 EUR |
| 560+ | 0.48 EUR |
| 1050+ | 0.41 EUR |
| 2030+ | 0.36 EUR |
| 5040+ | 0.34 EUR |
| 10010+ | 0.32 EUR |
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Technische Details AOI4286 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-251A, Vgs(th) (Max) @ Id: 2.9V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.
Weitere Produktangebote AOI4286
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| AOI4286 | Hersteller : AOS |
MOSFET N-CH 100V 14A TO-251 Група товару: Транзистори Од. вим: шт |
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