AOI4286 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Supplier Device Package: TO-251A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 70+ | 0.94 EUR |
| 140+ | 0.68 EUR |
| 560+ | 0.57 EUR |
| 1050+ | 0.49 EUR |
| 2030+ | 0.43 EUR |
| 5040+ | 0.4 EUR |
| 10010+ | 0.38 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
19 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details AOI4286 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 4A/14A TO251A, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc), Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Supplier Device Package: TO-251A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 50 V.
Weitere Produktangebote AOI4286
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AOI4286 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A Mounting: SMD Power dissipation: 30W Gate charge: 2.8nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO251A On-state resistance: 68mΩ |
auf Bestellung 3444 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AOI4286 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
Mounting: SMD
Power dissipation: 30W
Gate charge: 2.8nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO251A
On-state resistance: 68mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 30W; TO251A
Mounting: SMD
Power dissipation: 30W
Gate charge: 2.8nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO251A
On-state resistance: 68mΩ
auf Bestellung 3444 Stücke:
Lieferzeit 14-21 Tag (e)