Technische Details AOI442 Alpha & Omega Semiconductor Inc.
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 26A, Power dissipation: 30W, Case: TO251A, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: THT, Gate charge: 24.2nC, Kind of channel: enhancement.
Weitere Produktangebote AOI442
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AOI442 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26A Power dissipation: 30W Case: TO251A Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 24.2nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOI442 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 24.2nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; 30W; TO251A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26A
Power dissipation: 30W
Case: TO251A
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 24.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH