Technische Details AOI8N25 Alpha & Omega Semiconductor Inc.
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A, Case: TO251A, Mounting: THT, Gate charge: 6nC, Polarisation: unipolar, Drain current: 5A, Kind of channel: enhancement, Drain-source voltage: 250V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, On-state resistance: 0.56Ω.
Weitere Produktangebote AOI8N25
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
AOI8N25 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A Case: TO251A Mounting: THT Gate charge: 6nC Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 250V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.56Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOI8N25 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Case: TO251A
Mounting: THT
Gate charge: 6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5A; TO251A
Case: TO251A
Mounting: THT
Gate charge: 6nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
Im Einkaufswagen
Stück im Wert von UAH