AOK10B60D Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 20A TO-247
Power - Max: 163 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Not For New Designs
Packaging: Tube
Gate Charge: 17.4 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 260µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 10ns/72ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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Technische Details AOK10B60D Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 20A TO-247, Power - Max: 163 W, Current - Collector Pulsed (Icm): 40 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 20 A, Part Status: Not For New Designs, Packaging: Tube, Gate Charge: 17.4 nC, Test Condition: 400V, 10A, 30Ohm, 15V, Switching Energy: 260µJ (on), 70µJ (off), Td (on/off) @ 25°C: 10ns/72ns, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A, Reverse Recovery Time (trr): 105 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3.
Weitere Produktangebote AOK10B60D
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AOK10B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO247 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOK10B60D |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH