AOK75B65H1 ALPHA & OMEGA SEMICONDUCTOR


AOK75B65H1.pdf Hersteller: ALPHA & OMEGA SEMICONDUCTOR
AOK75B65H1 THT IGBT transistors
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Technische Details AOK75B65H1 ALPHA & OMEGA SEMICONDUCTOR

Description: IGBT 650V 75A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 295 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A, Supplier Device Package: TO-247, Td (on/off) @ 25°C: 47ns/175ns, Switching Energy: 3.77mJ (on), 2.04mJ (off), Test Condition: 400V, 75A, 4Ohm, 15V, Gate Charge: 109 nC, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 556 W.

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AOK75B65H1 Hersteller : Alpha & Omega Semiconductor 12aok75b65h1.pdf Trans IGBT Chip N-CH 650V 150A 556W
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AOK75B65H1 AOK75B65H1 Hersteller : Alpha & Omega Semiconductor Inc. AOK75B65H1.pdf Description: IGBT 650V 75A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 295 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 47ns/175ns
Switching Energy: 3.77mJ (on), 2.04mJ (off)
Test Condition: 400V, 75A, 4Ohm, 15V
Gate Charge: 109 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 556 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH