AOM020V120X2Q Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 51.96 EUR |
| 10+ | 38.26 EUR |
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Technische Details AOM020V120X2Q Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 27A, 15V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 27mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5180 pF @ 800 V, Qualification: AEC-Q101.
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Verfügbarkeit |
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AOM020V120X2Q | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 89A |
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