AOM065V120X2Q Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Power Dissipation (Max): 187.5W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.7 EUR |
| 10+ | 15.38 EUR |
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Technische Details AOM065V120X2Q Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V, Power Dissipation (Max): 187.5W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 10mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V, Qualification: AEC-Q101.
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| AOM065V120X2Q | Hersteller : Alpha & Omega Semiconductor |
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| AOM065V120X2Q | Hersteller : Alpha & Omega Semiconductor |
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| AOM065V120X2Q | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Drain-source voltage: 1.2kV Drain current: 29.6A On-state resistance: 90mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 187.5W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 62.3nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 85A Mounting: THT Case: TO247-4 Anzahl je Verpackung: 240 Stücke |
Produkt ist nicht verfügbar |
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| AOM065V120X2Q | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Drain-source voltage: 1.2kV Drain current: 29.6A On-state resistance: 90mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 187.5W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 62.3nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...15V Pulsed drain current: 85A Mounting: THT Case: TO247-4 |
Produkt ist nicht verfügbar |