AOM065V120X2Q Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
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Technische Details AOM065V120X2Q Alpha & Omega Semiconductor Inc.
Description: 1200V SILICON CARBIDE MOSFET, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.5V @ 10mA, Power Dissipation (Max): 187.5W (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V, Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4.
Weitere Produktangebote AOM065V120X2Q
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AOM065V120X2Q | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W Mounting: THT Pulsed drain current: 85A Power dissipation: 187.5W Gate charge: 62.3nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 29.6A Kind of channel: enhancement Drain-source voltage: 1.2kV Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: -5...15V Kind of package: tube Case: TO247-4 On-state resistance: 90mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| AOM065V120X2Q | Alpha & Omega Semiconductor |
SiC Silicon Carbide Power MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 240 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOM065V120X2Q |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Pulsed drain current: 85A
Power dissipation: 187.5W
Gate charge: 62.3nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 29.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
Case: TO247-4
On-state resistance: 90mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Pulsed drain current: 85A
Power dissipation: 187.5W
Gate charge: 62.3nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 29.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
Case: TO247-4
On-state resistance: 90mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOM065V120X2Q |
|
Hersteller: Alpha & Omega Semiconductor
SiC Silicon Carbide Power MOSFET
SiC Silicon Carbide Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
Im Einkaufswagen
Stück im Wert von UAH