Technische Details AON1606 AOS
Description: MOSFET N-CH 20V 700MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: 3-DFN (1.0 x 0.60), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote AON1606
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AON1606 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 20V 700MA 3DFNInput Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: 3-DFN (1.0 x 0.60) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON1606 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON1606 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON1606 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
Trans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH