AON2420 ALPHA & OMEGA SEMICONDUCTOR

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1.8W; DFN2x2B
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Gate charge: 4.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: DFN2x2B
Anzahl je Verpackung: 3000 Stücke
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Technische Details AON2420 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 30V 8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 6-DFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V.
Weitere Produktangebote AON2420
Foto | Bezeichnung | Hersteller | Beschreibung |
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AON2420 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V |
Produkt ist nicht verfügbar |
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![]() |
AON2420 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-DFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V |
Produkt ist nicht verfügbar |
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AON2420 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 6A; 1.8W; DFN2x2B Mounting: SMD Drain-source voltage: 30V Drain current: 6A On-state resistance: 11.7mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Gate charge: 4.3nC Kind of channel: enhancement Gate-source voltage: ±20V Case: DFN2x2B |
Produkt ist nicht verfügbar |