Technische Details AON2801 Alpha & Omega Semiconductor Inc.
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -2A; 730mW; DFN6, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -2A, Power dissipation: 0.73W, Case: DFN6, Gate-source voltage: ±8V, Mounting: SMD, Gate charge: 5nC, Kind of channel: enhancement.
Weitere Produktangebote AON2801
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AON2801 | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -2A; 730mW; DFN6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Power dissipation: 0.73W Case: DFN6 Gate-source voltage: ±8V Mounting: SMD Gate charge: 5nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON2801 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2A; 730mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.73W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 5nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2A; 730mW; DFN6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.73W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH