Technische Details AON2802 Alpha & Omega Semiconductor Inc.
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 1.3W; DFN6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 1.6A, Power dissipation: 1.3W, Case: DFN6, Gate-source voltage: ±12V, On-state resistance: 60mΩ, Mounting: SMD, Gate charge: 2.6nC, Kind of channel: enhancement.
Weitere Produktangebote AON2802
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| AON2802 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 1.3W; DFN6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.6A Power dissipation: 1.3W Case: DFN6 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 2.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON2802 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 1.3W; DFN6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Power dissipation: 1.3W
Case: DFN6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; 1.3W; DFN6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Power dissipation: 1.3W
Case: DFN6
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH


