AON3414 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
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Technische Details AON3414 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (3x3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AON3414 nach Preis ab 0.15 EUR bis 0.88 EUR
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AON3414 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD Case: DFN3x3 Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC On-state resistance: 17mΩ Power dissipation: 2W Drain current: 8A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 2992 Stücke: Lieferzeit 14-21 Tag (e) |
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AON3414 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 8699 Stücke: Lieferzeit 10-14 Tag (e) |
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