AON3414 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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Technische Details AON3414 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (3x3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AON3414 nach Preis ab 0.18 EUR bis 1.05 EUR
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AON3414 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD Power dissipation: 2W Case: DFN3x3 Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15nC On-state resistance: 17mΩ Drain current: 8A Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 2982 Stücke: Lieferzeit 14-21 Tag (e) |
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AON3414 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 10.5A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) |
auf Bestellung 8699 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON3414 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD
Power dissipation: 2W
Case: DFN3x3
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 17mΩ
Drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD
Power dissipation: 2W
Case: DFN3x3
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 17mΩ
Drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 2982 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 239+ | 0.36 EUR |
| 348+ | 0.25 EUR |
| 376+ | 0.23 EUR |
| 394+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| AON3414 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 8699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |