AON5820 ALPHA & OMEGA SEMICONDUCTOR
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Semiconductor structure: common drain
Case: DFN6
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.5nC
Power dissipation: 1W
Drain current: 8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 198+ | 0.36 EUR |
| 214+ | 0.33 EUR |
| 250+ | 0.32 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
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Technische Details AON5820 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 20V 10A 6DFN, Supplier Device Package: 6-DFN-EP (2x5), Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 10A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.7W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-WFDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote AON5820
| Foto | Bezeichnung | Hersteller | Beschreibung |
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AON5820 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 10A 6DFN Supplier Device Package: 6-DFN-EP (2x5) Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 20V Power - Max: 1.7W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
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