
AON5820 ALPHA & OMEGA SEMICONDUCTOR

Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain
Mounting: SMD
Case: DFN6
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Gate charge: 12.5nC
Power dissipation: 1W
Gate-source voltage: ±12V
Semiconductor structure: common drain
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
184+ | 0.39 EUR |
239+ | 0.3 EUR |
252+ | 0.28 EUR |
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Technische Details AON5820 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 20V 10A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-WFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-DFN-EP (2x5).
Weitere Produktangebote AON5820 nach Preis ab 0.28 EUR bis 0.59 EUR
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AON5820 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 8A; 1W; DFN6; common drain Mounting: SMD Case: DFN6 Polarisation: unipolar Drain-source voltage: 20V Drain current: 8A Gate charge: 12.5nC Power dissipation: 1W Gate-source voltage: ±12V Semiconductor structure: common drain Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON5820 | Hersteller : Alpha & Omega Semiconductor |
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Produkt ist nicht verfügbar |
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AON5820 | Hersteller : Alpha & Omega Semiconductor Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-WFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-DFN-EP (2x5) |
Produkt ist nicht verfügbar |