Weitere Produktangebote AON6144 nach Preis ab 0.65 EUR bis 4.76 EUR
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AON6144 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 89A; 31W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 89A Power dissipation: 31W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 70nC |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6144 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 100A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON6144 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 40V 100A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V |
auf Bestellung 24260 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON6144 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 89A; 31W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 89A
Power dissipation: 31W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 89A; 31W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 89A
Power dissipation: 31W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 93+ | 0.92 EUR |
| 104+ | 0.82 EUR |
| 112+ | 0.76 EUR |
| 250+ | 0.71 EUR |
| 500+ | 0.65 EUR |
| AON6144 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.37 EUR |
| 6000+ | 1.29 EUR |
| 9000+ | 1.25 EUR |
| AON6144 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
Description: MOSFET N-CH 40V 100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 20 V
auf Bestellung 24260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.76 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.54 EUR |
Mit diesem Produkt kaufen
| Batterie CR2032 Lithium 3V 1St. EEMB Produktcode: 116969
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zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: EEMB
Batterien
Material: Lithium (Li-MnO2)
Größe: CR2032
Spannung, V: 3 V
Bemerkung: Kapazität: 210 mAh
Form: Knopfzelle
Kapazität, mAh: 210 mAh
Batterien
Material: Lithium (Li-MnO2)
Größe: CR2032
Spannung, V: 3 V
Bemerkung: Kapazität: 210 mAh
Form: Knopfzelle
Kapazität, mAh: 210 mAh
auf Bestellung: 3557 St.
- 3557 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.7 EUR |
| 10+ | 0.63 EUR |
| 100+ | 0.57 EUR |



