AON6266E Alpha & Omega Semiconductor Inc.


AON6266E.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 60V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 20A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
auf Bestellung 1240 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
18+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details AON6266E Alpha & Omega Semiconductor Inc.

Description: MOSFET N-CHANNEL 60V 24A 8DFN, Power Dissipation (Max): 26W (Tc), Rds On (Max) @ Id, Vgs: 13.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Weitere Produktangebote AON6266E

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AON6266E AON6266E Hersteller : Alpha & Omega Semiconductor aon6266e.pdf Trans MOSFET N-CH 60V 24A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON6266E Hersteller : Alpha & Omega Semiconductor Inc. AON6266E.pdf Description: MOSFET N-CHANNEL 60V 24A 8DFN
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON6266E AON6266E Hersteller : ALPHA & OMEGA SEMICONDUCTOR AON6266E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 10.5W; DFN5x6; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 10.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH