Weitere Produktangebote AON6312 nach Preis ab 0.43 EUR bis 3.28 EUR
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AON6312 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 83A; 20W; DFN5x6 Case: DFN5x6 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Drain-source voltage: 30V Drain current: 83A Gate charge: 43nC On-state resistance: 1.85mΩ Power dissipation: 20W Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 1478 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6312 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CHANNEL 30V 85A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V |
auf Bestellung 1832 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON6312 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 83A; 20W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 30V
Drain current: 83A
Gate charge: 43nC
On-state resistance: 1.85mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 83A; 20W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 30V
Drain current: 83A
Gate charge: 43nC
On-state resistance: 1.85mΩ
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1478 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 73+ | 1.18 EUR |
| 150+ | 0.57 EUR |
| 173+ | 0.49 EUR |
| 190+ | 0.45 EUR |
| 500+ | 0.43 EUR |
| AON6312 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CHANNEL 30V 85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 85A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.28 EUR |
| 11+ | 2.09 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 1.01 EUR |


