AON6512 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 54A/150A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 15 V
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Technische Details AON6512 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 54A/150A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Power Dissipation (Max): 7.4W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 15 V.
Weitere Produktangebote AON6512 nach Preis ab 0.49 EUR bis 2.15 EUR
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AON6512 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 54A 8-Pin DFN EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6512 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 54A 8-Pin DFN EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6512 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 115A; 33W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 115A Power dissipation: 33W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 53nC Kind of channel: enhancement |
auf Bestellung 2226 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6512 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 30V; 20V; 1,7mOhm; 150A; 83W; -55°C ~ 150°C; AON6512 TAON6512 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2725 Stücke: Lieferzeit 7-14 Tag (e) |
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AON6512 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 54A/150A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 15 V |
auf Bestellung 4477 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON6512 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 54A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 54A 8-Pin DFN EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.68 EUR |
| AON6512 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 54A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 54A 8-Pin DFN EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.68 EUR |
| AON6512 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 115A; 33W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 115A
Power dissipation: 33W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 115A; 33W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 115A
Power dissipation: 33W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 53nC
Kind of channel: enhancement
auf Bestellung 2226 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 73+ | 1.18 EUR |
| 132+ | 0.64 EUR |
| 149+ | 0.57 EUR |
| 167+ | 0.51 EUR |
| 500+ | 0.49 EUR |
| AON6512 |
|
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 30V; 20V; 1,7mOhm; 150A; 83W; -55°C ~ 150°C; AON6512 TAON6512
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 30V; 20V; 1,7mOhm; 150A; 83W; -55°C ~ 150°C; AON6512 TAON6512
Anzahl je Verpackung: 25 Stücke
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.29 EUR |
| AON6512 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 54A/150A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 15 V
Description: MOSFET N-CH 30V 54A/150A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 15 V
auf Bestellung 4477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.15 EUR |
| 16+ | 1.36 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.62 EUR |