Technische Details AON6516 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 27A/32A 8DFN, Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Not For New Designs, Supplier Device Package: 8-DFN (5x6), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 6W (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote AON6516
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
AON6516 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 27A/32A 8DFNInput Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 6W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|
|
|
AON6516 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 27A/32A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 6W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1229 pF @ 15 V |
Produkt ist nicht verfügbar |
|
|
AON6516 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; 10W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 10W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |

