AON6558 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 25A/28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.29 EUR |
| 15000+ | 0.27 EUR |
| 21000+ | 0.26 EUR |
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Technische Details AON6558 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 25A/28A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V.
Weitere Produktangebote AON6558 nach Preis ab 0.27 EUR bis 1.38 EUR
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AON6558 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Power dissipation: 9.5W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhancement |
auf Bestellung 1168 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6558 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 25A/28A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V |
auf Bestellung 29129 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON6558 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 9.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 24A; 9.5W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Power dissipation: 9.5W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
auf Bestellung 1168 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 184+ | 0.46 EUR |
| 274+ | 0.31 EUR |
| 304+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| AON6558 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 25A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
Description: MOSFET N-CH 30V 25A/28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 15 V
auf Bestellung 29129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.38 EUR |
| 25+ | 0.86 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |

