Technische Details AON6576 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 26A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, Power Dissipation (Max): 5W (Ta), 26W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 15 V.
Weitere Produktangebote AON6576 nach Preis ab 0.35 EUR bis 0.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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AON6576 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 26A 8-Pin DFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON6576 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 25A; 10.4W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 10.4W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 18.8nC Kind of channel: enhancement |
auf Bestellung 1317 Stücke: Lieferzeit 14-21 Tag (e) |
|
| AON6576 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 26A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 26A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.39 EUR |
| AON6576 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 10.4W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 10.4W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 18.8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 10.4W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Power dissipation: 10.4W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 18.8nC
Kind of channel: enhancement
auf Bestellung 1317 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 175+ | 0.49 EUR |
| 195+ | 0.44 EUR |
| 221+ | 0.38 EUR |
| 500+ | 0.35 EUR |



