Weitere Produktangebote AON6884 (Gehäuse 8-DFN-EP)
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AON6884 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET 2N-CH 40V 9A 8DFNPart Status: Active Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 40V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
AON6884 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 21A; 8W; DFN5x6 EP2 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 21A Power dissipation: 8W Case: DFN5x6 EP2 Gate-source voltage: ±20V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 13.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
AON6884 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 40V 9A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON6884 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 40V 9A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 9A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON6884 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 21A; 8W; DFN5x6 EP2
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 8W
Case: DFN5x6 EP2
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 21A; 8W; DFN5x6 EP2
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 21A
Power dissipation: 8W
Case: DFN5x6 EP2
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 13.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON6884 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 40V 9A 8-Pin DFN EP T/R
Trans MOSFET N-CH 40V 9A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH