Technische Details AON7292 Alpha & Omega Semiconductor
Description: MOSFET N-CH 100V 9A/23A 8DFN, Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN-EP (3.3x3.3), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 4.1W (Ta), 28W (Tc).
Weitere Produktangebote AON7292
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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AON7292 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 100V 9A/23A 8DFNRds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 4.1W (Ta), 28W (Tc) |
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AON7292 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9A/23A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
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AON7292 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 11W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| AON7292 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Description: MOSFET N-CH 100V 9A/23A 8DFN
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7292 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9A/23A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AON7292 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 11W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 11W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH