AON7292 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.83 EUR |
| 6000+ | 0.77 EUR |
| 9000+ | 0.76 EUR |
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Technische Details AON7292 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN, Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-DFN-EP (3.3x3.3), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Power Dissipation (Max): 4.1W (Ta), 28W (Tc).
Weitere Produktangebote AON7292 nach Preis ab 0.94 EUR bis 3.08 EUR
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AON7292 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 9A/23A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-DFN-EP (3.3x3.3) Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 4.1W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 55708 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AON7292 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 9A/23A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9A/23A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 55708 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.08 EUR |
| 11+ | 1.95 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |