AON7407
Produktcode: 135359
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Weitere Produktangebote AON7407 nach Preis ab 0.37 EUR bis 1.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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AON7407 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7407 | Alpha & Omega Semiconductor |
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R |
auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 14.5A/40A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7407 | ALPHA |
Transistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7407 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 14.5A/40A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V |
auf Bestellung 91049 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7407 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -29A Power dissipation: 12W Case: DFN3x3 EP Gate-source voltage: ±8V On-state resistance: 18mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhancement |
auf Bestellung 3457 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| AON7407 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.37 EUR |
| AON7407 |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 20V 40A 8-Pin DFN-A EP T/R
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.43 EUR |
| 15000+ | 0.37 EUR |
| AON7407 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.43 EUR |
| 15000+ | 0.38 EUR |
| AON7407 |
|
Hersteller: ALPHA
Transistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407
Anzahl je Verpackung: 50 Stücke
Transistor P-Channel MOSFET; 20V; 8V; 18mOhm; 40A; 29W; -55°C ~ 150°C; AON7407 TAON7407
Anzahl je Verpackung: 50 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.65 EUR |
| AON7407 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
Description: MOSFET P-CH 20V 14.5A/40A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 14A, 4.5V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4195 pF @ 10 V
auf Bestellung 91049 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 19+ | 1.17 EUR |
| 50+ | 0.86 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| AON7407 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -29A; 12W; DFN3x3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -29A
Power dissipation: 12W
Case: DFN3x3 EP
Gate-source voltage: ±8V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
auf Bestellung 3457 Stücke:
Lieferzeit 14-21 Tag (e)