AON7423
Produktcode: 129885
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Weitere Produktangebote AON7423 nach Preis ab 0.38 EUR bis 3.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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AON7423 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 28A/50A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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AON7423 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -39A; 33W; DFN3.3x3.3 EP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -39A Power dissipation: 33W Case: DFN3.3x3.3 EP Gate-source voltage: ±8V On-state resistance: 11mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhancement |
auf Bestellung 3070 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7423 | ALPHA&OMEGA |
Trans MOSFET P-CH 20V 50A 8-Pin DFN EP T/R AON7423 TAON7423Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7423 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 20V 28A/50A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V Power Dissipation (Max): 6.2W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V |
auf Bestellung 60507 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON7423 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 28A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V
Description: MOSFET P-CH 20V 28A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.79 EUR |
| AON7423 |
![]() |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -39A; 33W; DFN3.3x3.3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±8V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -39A; 33W; DFN3.3x3.3 EP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -39A
Power dissipation: 33W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±8V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
auf Bestellung 3070 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 169+ | 0.5 EUR |
| 191+ | 0.44 EUR |
| 210+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| AON7423 |
![]() |
Hersteller: ALPHA&OMEGA
Trans MOSFET P-CH 20V 50A 8-Pin DFN EP T/R AON7423 TAON7423
Anzahl je Verpackung: 10 Stücke
Trans MOSFET P-CH 20V 50A 8-Pin DFN EP T/R AON7423 TAON7423
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.2 EUR |
| AON7423 |
![]() |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 20V 28A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V
Description: MOSFET P-CH 20V 28A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 4.5V
Power Dissipation (Max): 6.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5626 pF @ 10 V
auf Bestellung 60507 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.03 EUR |
| 11+ | 1.93 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.92 EUR |


