AON7466 ALPHA&OMEGA
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 30V; 25V; 11,3mOhm; 30A; 25W; -55°C ~ 150°C; AON7466 TAON7466
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 0.68 EUR |
Artikel auf Bestellung
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Lieferzeit:
7-14 Tag (e)
Mindestmenge:
50 Stücke
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Technische Details AON7466 ALPHA&OMEGA
Description: MOSFET N-CH 30V 15A/30A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15.
Weitere Produktangebote AON7466
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
AON7466 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN3x3 EP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 23A Power dissipation: 10W Case: DFN3x3 EP Gate-source voltage: ±25V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 9.5nC Kind of channel: enhancement |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON7466 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±25V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 23A; 10W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 23A
Power dissipation: 10W
Case: DFN3x3 EP
Gate-source voltage: ±25V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)

