AON7508 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 26A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details AON7508 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 26A/32A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V.
Weitere Produktangebote AON7508 nach Preis ab 0.30 EUR bis 1.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
AON7508 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 32A 8-Pin DFN-A EP T/R |
auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
AON7508 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 32A 8-Pin DFN-A EP T/R |
auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
AON7508 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 30V 26A/32A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V |
auf Bestellung 38892 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
AON7508 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 32A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
AON7508 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 32A 8-Pin DFN-A EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
AON7508 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 25W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 25W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 13.6nC Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 3mΩ Drain current: 25A Drain-source voltage: 30V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
AON7508 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 25W; DFN3x3 EP Mounting: SMD Case: DFN3x3 EP Power dissipation: 25W Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 13.6nC Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 3mΩ Drain current: 25A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |