Technische Details AON7510 Alpha & Omega Semiconductor
Description: MOSFET N-CH 30V 45A/75A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 75A (Tc), Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V, Power Dissipation (Max): 4.1W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-DFN-EP (3.3x3.3), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V.
Weitere Produktangebote AON7510
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AON7510 | Alpha & Omega Semiconductor Inc. |
 Description: MOSFET N-CH 30V 45A/75A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V Power Dissipation (Max): 4.1W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-DFN-EP (3.3x3.3) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AON7510 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 59A; 18.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Power dissipation: 18.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 1.25mΩ Mounting: SMD Gate charge: 60nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AON7510 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 30V 45A/75A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Description: MOSFET N-CH 30V 45A/75A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AON7510 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; 18.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Power dissipation: 18.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 60nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH