Weitere Produktangebote AON7934 nach Preis ab 0.36 EUR bis 3.09 EUR
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AON7934 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 9/10W; DFN3x3A Case: DFN3x3A Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 12/14A Gate charge: 3.9/6nC On-state resistance: 10.2/7.7mΩ Power dissipation: 9/10W Gate-source voltage: ±20V Semiconductor structure: asymmetric |
auf Bestellung 4159 Stücke: Lieferzeit 14-21 Tag (e) |
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AON7934 | ALPHA&OMEGA |
Transistor 2xN-Channel MOSFET; 30V; 20V; 15,8mOhm/11,6mOhm; 16A/18A; 23W/25W; -55°C ~ 150°C; AON7934 TAON7934Anzahl je Verpackung: 25 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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AON7934 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 13A/15A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 15A Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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| AON7934 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 9/10W; DFN3x3A
Case: DFN3x3A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12/14A
Gate charge: 3.9/6nC
On-state resistance: 10.2/7.7mΩ
Power dissipation: 9/10W
Gate-source voltage: ±20V
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 9/10W; DFN3x3A
Case: DFN3x3A
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12/14A
Gate charge: 3.9/6nC
On-state resistance: 10.2/7.7mΩ
Power dissipation: 9/10W
Gate-source voltage: ±20V
Semiconductor structure: asymmetric
auf Bestellung 4159 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 1.06 EUR |
| 178+ | 0.48 EUR |
| 204+ | 0.42 EUR |
| 219+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| AON7934 |
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Hersteller: ALPHA&OMEGA
Transistor 2xN-Channel MOSFET; 30V; 20V; 15,8mOhm/11,6mOhm; 16A/18A; 23W/25W; -55°C ~ 150°C; AON7934 TAON7934
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 30V; 20V; 15,8mOhm/11,6mOhm; 16A/18A; 23W/25W; -55°C ~ 150°C; AON7934 TAON7934
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 1.34 EUR |
| AON7934 |
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Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 11+ | 1.96 EUR |
| 100+ | 1.31 EUR |



