AONA66916 Alpha & Omega Semiconductor Inc.


Hersteller: Alpha & Omega Semiconductor Inc.
Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4690 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.06 EUR
10+5.33 EUR
100+3.79 EUR
500+3.13 EUR
1000+2.92 EUR
2000+2.90 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AONA66916 Alpha & Omega Semiconductor Inc.

Description: LINEAR IC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V, Power Dissipation (Max): 7.5W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V.

Weitere Produktangebote AONA66916

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
AONA66916 Hersteller : ALPHA & OMEGA SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 197A; Idm: 330A
Gate charge: 66nC
Technology: AlphaSGT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 330A
Mounting: SMD
Case: DFN5x6
Drain-source voltage: 100V
Drain current: 197A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONA66916 Hersteller : Alpha & Omega Semiconductor Inc. Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONA66916 Hersteller : ALPHA & OMEGA SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 197A; Idm: 330A
Gate charge: 66nC
Technology: AlphaSGT™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 330A
Mounting: SMD
Case: DFN5x6
Drain-source voltage: 100V
Drain current: 197A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH