AOND32324 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 12+ | 1.89 EUR |
| 100+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
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Technische Details AOND32324 Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 13A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V, Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (5x6).
Weitere Produktangebote AOND32324
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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AOND32324 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 13A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFN (5x6) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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AOND32324 | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 16/-16A Power dissipation: 5/12W Case: DFN5x6 Gate-source voltage: ±20V; ±25V On-state resistance: 14/12mΩ Mounting: SMD Gate charge: 14nC Kind of channel: enhancement Kind of transistor: complementary pair |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| AOND32324 |
|
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| AOND32324 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 16/-16A
Power dissipation: 5/12W
Case: DFN5x6
Gate-source voltage: ±20V; ±25V
On-state resistance: 14/12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 16/-16A
Power dissipation: 5/12W
Case: DFN5x6
Gate-source voltage: ±20V; ±25V
On-state resistance: 14/12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH