AONL32328 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Tape & Reel (TR)
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Technische Details AONL32328 Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN, Supplier Device Package: 12-DFN-EP (4x3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 2.6W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N and 2 P-Channel, Mounting Type: Surface Mount, Package / Case: 12-PowerWDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote AONL32328 nach Preis ab 0.69 EUR bis 2.34 EUR
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AONL32328 | Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N/2P-CH 30V 8A 12DFN Supplier Device Package: 12-DFN-EP (4x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2.6W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N and 2 P-Channel Mounting Type: Surface Mount Package / Case: 12-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 9592 Stücke: Lieferzeit 10-14 Tag (e) |
|
| AONL32328 |
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 9592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 15+ | 1.48 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.69 EUR |