AONP36336 Alpha & Omega Semiconductor Inc.


AONP36336.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.81 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details AONP36336 Alpha & Omega Semiconductor Inc.

Description: MOSFET 2N-CH 30V 50A 8DFN, Supplier Device Package: 8-DFN-EP (3.3x3.3), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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AONP36336 AONP36336 Alpha & Omega Semiconductor Inc. AONP36336.pdf Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
auf Bestellung 14084 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36336 AONP36336.pdf
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
auf Bestellung 14084 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH