AONR21321 Alpha & Omega Semiconductor Inc.
Hersteller: Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 139848 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.24 EUR |
| 10000+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 25000+ | 0.2 EUR |
| 35000+ | 0.19 EUR |
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Technische Details AONR21321 Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 24A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V, Power Dissipation (Max): 4.1W (Ta), 24W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-DFN-EP (3x3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V.
Weitere Produktangebote AONR21321 nach Preis ab 0.15 EUR bis 3.06 EUR
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AONR21321 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R |
auf Bestellung 1198 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21321 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R |
auf Bestellung 1198 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21321 | Hersteller : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 24A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V Power Dissipation (Max): 4.1W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-DFN-EP (3x3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V |
auf Bestellung 143189 Stücke: Lieferzeit 10-14 Tag (e) |
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AONR21321 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AONR21321 | Hersteller : Alpha & Omega Semiconductor Inc. |
P-Channel 30 V 24A (Tc) 4.1W (Ta), 24W (Tc) Surface Mount 8-DFN-EP (3x3) |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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AONR21321 | Hersteller : Alpha & Omega Semiconductor |
Trans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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| AONR21321 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 9.6W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhancement Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| AONR21321 | Hersteller : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 9.6W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |